Infineon FZ800R12KS4 IGBT Module

FZ800R12KS4 Description

Brand: Infineon Technologies AGVces: 1,200 Volts DCIc: 800 AmpsVges +/-: ±20Iges Max: 0.4 MicroAmpsVge(th) Min/Max: 6.5 VoltsHeight (mm): 38Width (mm): 130Depth (mm): 140H x W x D (in.): 1.5 x 5.12 x 5.51Net Weight: 2 lb 3 ozFZ800R12KS4 is one of Infineon’s most powerful IGBT transistor modules which can generate power up to 1200V or 800A. It has powerful features, making it one of the best IGBT transistor modules today. It has enlarged diode and ALSiC base plate. With high quality and durability, it guarantees cutting edge conversion efficiency and power density.

FZ800R12KS4  2.20 lbs

Target Applications

FZ800R12KS4 could be used in High Power Switching, A.C. Motor Controls, D.C. Motor Controls, Uninterruptible Power Supply, Inverter for motor drive

Features

IGBT-Module

800A/1200V/IGBT/1U