FZ800R12KS4 Infineon 1200V 800A 3-Level NPC IGBT Module

FZ800R12KS4 IGBT Module In-stock / Infineon: 1200V 800A. 3-Level NPC for efficient power conversion. 90-day warranty, motor drives, solar inverters. Global shipping. Get quote.

· Categories: IGBT
· Manufacturer: Infineon
· Price: US$ 180
· Date Code: Please Verify on Quote
. Available Qty: 124
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869
Tags:

Content last revised on January 9, 2026

Infineon FZ800R12KS4 | Mastering High-Efficiency 3-Level Inverter Designs

The Infineon **FZ800R12KS4** is a high-power IGBT module specifically engineered to streamline the development of advanced three-level power conversion systems. By integrating a full three-phase Neutral Point Clamped (NPC) topology into a single, thermally efficient package, this module empowers engineers to build more compact, reliable, and higher-performing inverters for demanding industrial applications.

  • Brand: Infineon
  • Model: FZ800R12KS4
  • Core Function: 1200V, 800A Three-Level NPC IGBT Module
  • Key Benefit: Dramatically reduces output voltage distortion, enabling smaller and more cost-effective filter components.
  • Primary Applications: High-power solar inverters, uninterruptible power supplies (UPS), and industrial motor drives.

Technical Deep Dive: The Power of Three-Level Topology

The standout feature of the **FZ800R12KS4** is its integrated Neutral Point Clamped inverter topology. This architecture is a significant leap forward from conventional two-level designs for high-voltage applications.

  • Reduced Voltage Stress and Switching Losses

    In a 3-level design, each IGBT only has to block half of the DC-link voltage. This lower voltage stress allows for the use of 1200V-rated IGBTs in systems with a high DC bus voltage. More importantly, the lower switching voltage step (Vdc/2 instead of Vdc) results in significantly lower switching losses (Eon, Eoff), which is critical for achieving high efficiency at higher switching frequencies.

  • Superior Output Waveform Quality

    The three-level output (generating +Vdc/2, 0, and -Vdc/2) produces a voltage waveform that is much closer to a pure sine wave than a standard two-level inverter. This directly reduces the Total Harmonic Distortion (THD), lessening the burden on output filters. For designers, this means smaller, lighter, and less expensive inductors and capacitors are needed to meet grid codes or motor performance requirements.

Multi-Dimensional Application Scenarios

The unique advantages of the **Infineon FZ800R12KS4** translate into tangible value across several critical industries.

  • Solar Central Inverters: In large-scale solar farms, maximizing efficiency is paramount. The FZ800R12KS4's high efficiency minimizes energy loss during DC-to-AC conversion. Its superior waveform quality helps meet strict grid-feed regulations with smaller and more reliable filtering systems, reducing both capital expenditure and physical footprint.
  • High-Power UPS Systems: For data centers and critical facilities, the reliability of a UPS is non-negotiable. The reduced thermal load on each semiconductor die within this module enhances system longevity. The cleaner output power protects sensitive downstream equipment from harmonic damage, ensuring operational continuity.
  • Industrial Motor Drives: Advanced motor control requires precise voltage and frequency regulation. By using the FZ800R12KS4, drive designers can reduce motor torque ripple, decrease audible noise, and mitigate the risk of bearing damage caused by high dv/dt, leading to smoother operation and longer motor life.

Key Technical Parameters

Parameter Value
Collector-Emitter Voltage (Vces) 1200 V
Continuous Collector Current (Ic) @ 80°C 800 A
Gate-Emitter Voltage (Vges) ±20 V
Technology IGBT4 - E4 with Emitter Controlled Diode
Topology Three-Level NPC
Package IHM-B

For a complete list of specifications, please refer to the official FZ800R12KS4 Datasheet.

FAQ: Common Questions for the FZ800R12KS4

  • How does this 3-level module compare to using discrete IGBTs?
    While using discrete components offers some layout flexibility, the FZ800R12KS4 provides a pre-engineered, factory-tested solution. This drastically reduces stray inductance between components, simplifies the gate driver design, ensures matched dynamic characteristics between devices, and significantly cuts down assembly time and complexity.
  • What is the main benefit of the integrated Emitter Controlled Diode?
    The IGBT4 Emitter Controlled Diode is optimized for soft switching behavior. This minimizes voltage overshoots during diode turn-off, which in turn reduces electromagnetic interference (EMI). This feature helps engineers achieve EMC compliance with simpler and less costly snubber or filter circuits.
  • Is this module suitable for a project currently using a 2-level topology?
    Migrating from a 2-level to a 3-level design is a significant architectural change. The **FZ800R12KS4** is ideal for new designs aiming for the highest efficiency and power quality, or for major redesigns of existing high-power platforms. For simpler, lower-power applications, a traditional 2-level module might be more straightforward.

To determine if the **FZ800R12KS4** is the right fit for your next high-power project or to explore other topologies, browse our complete collection of IGBT Modules. For technical inquiries and volume pricing, please contact us for a quote.

More from Infineon

Infineon
Infineon
Infineon
Infineon
Infineon
Infineon