Starpower GD200HFL120C8SN | Robust 1200V IGBT for High-Frequency Power Conversion
The Starpower GD200HFL120C8SN is a 1200V, 200A half-bridge IGBT module engineered for demanding power conversion systems where efficiency, thermal stability, and reliability are non-negotiable. It leverages advanced silicon technology to deliver a superior balance of conduction and switching performance, making it an ideal choice for the next generation of industrial drives, solar inverters, and high-power rectifiers. As a core component in our portfolio of high-performance IGBT modules, this device provides engineers with a robust and efficient building block for modern power electronics.
- Voltage and Current Rating: 1200V / 200A for ample design margin in high-power applications.
- Core Technology: Utilizes 4th generation Field Stop (FS) Trench IGBT technology for optimized switching characteristics.
- Low Losses: Features a low saturation voltage (Vce(sat)) and minimized total switching energy (Ets), directly enhancing system efficiency.
- High Reliability: Offers a short-circuit withstand time of ≥10μs and includes an integrated NTC thermistor for precise temperature monitoring.
- High-Frequency Capability: Optimized for switching frequencies up to 8 kHz, enabling more compact system designs.
Technical Deep Dive: Engineering for Performance and Reliability
The performance of the GD200HFL120C8SN is rooted in its sophisticated silicon design and packaging. Two key attributes stand out for system designers.
Advanced Field-Stop Trench Gate Technology
This module employs an advanced Field Stop (FS) Trench Gate IGBT structure. Unlike older planar technologies, the Trench Gate architecture drastically reduces the on-state voltage drop (Vce(sat)), minimizing conduction losses. The critical "Field-Stop" layer, a thin N-doped region, halts the electric field and significantly reduces the thickness of the drift region. The direct engineering benefit is a sharp reduction in turn-off tail current, which dramatically lowers turn-off switching losses (Eoff). This combination allows the GD200HFL120C8SN to operate efficiently at higher frequencies, enabling the use of smaller and lighter passive components like inductors and capacitors in the final system.
Low Vce(sat) and Positive Temperature Coefficient
With a typical Vce(sat) of just 1.95V at its nominal current, this module ensures minimal power is wasted as heat during operation. Crucially, the Vce(sat) exhibits a positive temperature coefficient. This means as the chip's temperature increases, its on-state voltage rises slightly. This inherent characteristic is vital for reliable high-current applications, as it facilitates safe IGBT paralleling by ensuring automatic current sharing between modules without the risk of thermal runaway in one device.
Key Parameter Overview
The following table outlines the critical electrical and thermal characteristics for the GD200HFL120C8SN. For a comprehensive list of parameters and operating curves, you can Download the Datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1200 V |
| Continuous Collector Current (I_C) @ T_c = 80°C | 200 A |
| Collector-Emitter Saturation Voltage (V_CE(sat)), Typ. @ 200A, 25°C | 1.95 V |
| Total Switching Energy (E_ts) @ T_j = 150°C, 200A | 49.5 mJ (Typ.) |
| Short-Circuit Withstand Time (t_sc) | ≥ 10 µs |
| Thermal Resistance, Junction-to-Case (R_th(j-c)), IGBT | 0.17 °C/W |
Optimized Application Performance
The GD200HFL120C8SN is not just a component; it's a solution tailored for specific industrial challenges:
- Variable Frequency Drives (VFDs): In motor drives, its low total losses translate directly to higher inverter efficiency and reduced heatsink size. The module's robust Safe Operating Area (SOA) and short-circuit rating provide the durability needed to handle demanding torque loads and potential fault conditions.
- Solar Inverters: For utility-scale solar projects, every percentage point of efficiency matters. The high-frequency switching capability of this module enables the design of compact, high-power-density inverters, maximizing energy harvest and reducing system balance-of-plant costs.
- UPS and Welding Systems: In UPS systems, reliability is paramount. The excellent thermal management (low R_th) and integrated NTC ensure stable operation. In high-frequency welding applications, its fast and clean switching behavior contributes to a stable arc and precise power delivery.
Engineer's FAQ
What is the recommended gate driver voltage for the GD200HFL120C8SN?
For optimal performance, a gate-emitter voltage (V_GE) of +15V is recommended for turn-on. To ensure a robust and fast turn-off while preventing parasitic turn-on due to high dV/dt, a negative gate voltage between -8V and -15V is highly advised. Implementing a proper negative bias is a key practice for reliable operation. For a detailed guide, see these 5 practical tips for robust IGBT gate drive design.
Can this module support designs with parallel connections for higher current?
Yes, the GD200HFL120C8SN is well-suited for paralleling. Its positive temperature coefficient of Vce(sat) promotes natural current balancing between modules. However, for successful parallel operation, it is critical to ensure symmetrical PCB layout for the gate drive signals and power connections to minimize stray inductance and ensure simultaneous switching. If your design requires significant current scaling, please contact our technical team to discuss best practices.
