General Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as general inverters and UPS.
Features
Low VCE(sat) SPT+ IGBT technology
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Collector-Emitter Voltage (VCES): 1200 V
Gate-Emitter Voltage (VGES): ±20 V
Continuous Collector Current:
@ TC=25°C: 460 A
@ TC=100°C: 300 A
Pulsed Collector Current (ICM):
Pulsed Collector Current (tp=1ms): 600 A
Diode Continuous Forward Current (IF): 300 A
Diode Maximum Forward Current (IFM): 600 A
Maximum Power Dissipation (PD) @ Tj=175°C: 1974 W
Maximum Junction Temperature (Tj): 175°C
Operating Junction Temperature (Tjop): -40 to +150°C
Storage Temperature Range (TSTG): -40 to +125°C
Isolation Voltage RMS, f=50Hz, t=1min (VISO): 4000 V
Mounting Torque for Power Terminal Screw (M6): 2.5 to 5.0 N·m
Mounting Torque for Mounting Screw (M6): 3.0 to 5.0 N·m
These specifications provide important information about the electrical and thermal characteristics of the semiconductor device. It can handle a collector-emitter voltage of up to 1200 V and has specific current ratings at different temperatures. The device also has a specified maximum power dissipation and operating temperature range.
