GD200FFX120C6SA Starpower 1200V 200A Three-Phase IGBT Module

Content last revised on December 3, 2025

GD200FFX120C6SA: Engineering Deep Dive into a High-Efficiency 1200V IGBT Module

The GD200FFX120C6SA is a high-performance IGBT module engineered by Starpower for demanding power conversion applications. This device integrates a full three-phase bridge (six-pack) configuration into a single, compact C6 package, delivering a robust solution for system designers focused on efficiency and power density. At its core, the module leverages an advanced low-loss Trench Gate Field-Stop IGBT technology, providing a superior balance between conduction and switching losses. It is rated for a collector-emitter voltage of **1200V** and a continuous collector current of **200A** (at Tc=100°C), making it a formidable component for high-power inverters. Key benefits include enhanced thermal performance due to a maximum junction temperature of 175°C and increased system reliability enabled by its short-circuit withstand capability. This module directly addresses the engineering challenge of minimizing power dissipation in high-frequency switching systems, such as industrial motor drives. For systems prioritizing maximum efficiency and thermal stability in the 100-150kW range, this **1200V** IGBT module represents an optimal design choice.

Application Scenarios & Value

System-Level Benefits in High-Power Industrial Inverters

The GD200FFX120C6SA is engineered for high-reliability power systems where efficiency and thermal management are critical design drivers. Its primary application is in **inverters for motor drives**, including AC and DC servo drive amplifiers and general-purpose Variable Frequency Drives (VFDs). In a typical VFD controlling a 110kW industrial motor, the challenge is to minimize heat generation within the power stage to maintain high efficiency and reduce the size and cost of the required heatsink. The GD200FFX120C6SA addresses this directly through its low collector-emitter saturation voltage (**VCE(sat)**) of 1.75V (typical at 200A, 150°C). This specification signifies low on-state power loss, which is analogous to reducing friction in a mechanical system. Less energy is wasted as heat during operation, directly translating to higher overall system efficiency and a more manageable thermal profile, allowing for more compact and cost-effective system designs. Other key applications include uninterruptible power supplies (UPS) and solar inverters, where its robust **1200V** blocking voltage and 200A current handling capability provide ample design margin and long-term reliability.

For applications requiring even greater current handling for higher power output, the related CM400HA-24H offers a higher current rating within a different package configuration, suitable for scaling up inverter designs.

 Key Parameter Overview

Decoding the Specs for Enhanced Switching Performance

The technical specifications of the GD200FFX120C6SA are tailored for high-frequency power conversion, emphasizing a balance between low losses and operational robustness. Below is a summary of the key parameters that define its performance envelope.

 Technical Deep Dive

Inside the Trench Field-Stop Technology for Optimal Performance

The performance of the GD200FFX120C6SA is fundamentally enabled by its use of advanced Trench Gate Field-Stop (Trench FS) IGBT technology. This semiconductor structure is engineered to resolve a classic trade-off in power electronics: the inverse relationship between conduction losses (VCE(sat)) and switching losses (Eon/Eoff). The "Trench Gate" architecture creates a vertical current path, increasing the channel density on the silicon die. This is like adding more lanes to a highway, allowing more current to flow with less resistance, which directly results in a lower VCE(sat) and reduced heat generation when the device is on.

Simultaneously, the "Field-Stop" layer, a thin, precisely doped region within the silicon, acts to abruptly halt the electric field. This allows the device's drift region to be made significantly thinner without compromising its **1200V** blocking capability. A thinner drift region means fewer charge carriers need to be swept out during turn-off, drastically reducing the switching time and the associated energy loss (Eoff). This combination allows the GD200FFX120C6SA to operate efficiently at higher switching frequencies, enabling the use of smaller magnetic components and increasing the power density of the overall system. For more on the fundamentals of IGBT technology, an excellent resource is Infineon's application note on their TrenchSTOP™ technology.

 Frequently Asked Questions (FAQ)

What is the primary advantage of the 175°C maximum junction temperature?
The high Tjmax of 175°C provides a significant thermal margin. This allows the module to operate reliably under heavy load or in high ambient temperature environments without derating, enhancing the ruggedness and longevity of the end application. It also offers more flexibility in thermal design, potentially allowing for smaller heatsinks.

How does the positive temperature coefficient of VCE(sat) benefit paralleling modules?
A positive temperature coefficient means that as an individual IGBT chip heats up, its on-state resistance (and thus VCE(sat)) increases. When multiple modules are connected in parallel, if one module starts to carry more current and heat up, its rising VCE(sat) will naturally cause current to redistribute to the cooler modules. This self-balancing effect prevents thermal runaway and ensures stable current sharing, a critical feature for building scalable, high-power inverter systems. For a deeper understanding of this principle, explore our guide on achieving balanced current sharing.

What does the 10µs short-circuit withstand time (tsc) signify for system design?
This specification indicates the module can survive a direct short-circuit condition for 10 microseconds before catastrophic failure. This is a critical safety parameter that gives the system's protection circuitry—such as the gate driver's desaturation detection—enough time to detect the fault and safely shut down the IGBT, preventing damage to the module and the wider system.

Is an NTC thermistor included in the GD200FFX120C6SA?
The datasheet for this specific model, GD200FFX120C6SA, does not explicitly list an integrated NTC thermistor. Engineers requiring real-time temperature feedback for precise thermal management and over-temperature protection should plan for an external temperature sensing solution mounted near the module's baseplate.

From a strategic perspective, the GD200FFX120C6SA serves as a foundational building block for modern, high-efficiency power conversion platforms. Its balanced performance characteristics, enabled by Trench FS technology, provide engineers with the tools to meet increasingly stringent energy efficiency regulations and market demands for more compact, reliable, and cost-effective power electronics.