The Infineon BSM10GD120DN2 is a highly efficient Insulated Gate Bipolar Transistor (IGBT) power module designed for applications requiring high power handling and fast switching capabilities.
Specifications
- Maximum Collector-Emitter Voltage (VCE): 1200V
- Continuous Collector Current (IC): 15A at 80°C
- Collector-Gate Voltage (VCGR): 1200V
- Gate-Emitter Voltage (VGE): ±20V
- Pulsed Collector Current (ICpuls): 30A at 80°C
- Power Dissipation (Ptot): 80W at 25°C
- Thermal Resistance (RthJC): ≤ 1.52 K/W
- Diode Thermal Resistance (RthJCD): ≤ 2 K/W
- Insulation Test Voltage: 2500V AC for 1 minute
- Operating Temperature Range (Tj): -40°C to +150°C
- Storage Temperature Range (Tstg): -40°C to +125°C
Key Features
- Package Type: EconoPACK
- Configuration: Three-phase full-bridge
- Includes: Fast free-wheel diodes
- Chip Case: Insulated metal base plate
Applications
The BSM10GD120DN2 is suitable for various high-power applications including industrial motor drives, uninterruptible power supplies (UPS), renewable energy inverters, and other power management systems that require reliable and efficient power switching.
Advantages
- High Voltage Handling: With a maximum voltage rating of 1200V, it is suitable for high-voltage applications.
- Thermal Efficiency: The module’s low thermal resistance ensures efficient heat dissipation, which is crucial for maintaining performance and longevity in high-power environments.
- Fast Switching: The integration of fast free-wheel diodes aids in reducing switching losses and improving overall efficiency.
Conclusion
The BSM10GD120DN2 power module from Infineon offers robust performance for a wide range of high-power applications.