IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.
The A3-Class are optimized for low saturation voltage V(sat) and are well suited for applications requiring switching frequencies up to 5kHz. Similarly, the B3-Class offers low saturation voltages.
Features
- Optimized for low conduction and switching losses
- Square RBSOA
- International standard packages
Advantages
- High power density
- Low gate drive requirement
Applications
- Power Inverters
- UPS
- Motor Drives
- SMPS
- PFC Circuits
- Battery Chargers
- Welding Machines
- L amp Ballasts
Maximum ratings and characteristics
●Absolute maximum ratings (Tc=25°C unless without specified)
- Collector-Emitter voltage Vces:600V
- Gate-Emitter voltage VGES:±20V
- Collector current Ic Continuous Tc=25°C :75A
- Collector current Icp 1ms Icm=25°C :280A
- Collector power dissipation Pc:300W
- Operating junction temperature Tj:+150°C
- Storage temperature Tstg :-55 to +125°C
- Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300°C
- Plastic body for 10 seconds 260°C
- Mounting torque(TO-247 & TO-220) 1.13/10 Nm/lb.in.
- Weight TO-247 6.0 g
