Semikron MDT1200-18E IGBT Module

MDT1200-18E

Features

ï Hermetic metal case with ceramic insulator

ï Capsule package for double sided cooling

ï Shallow design with single sided cooling

ï International standard case

ï Off-state and reverse voltages up to 1800 V

ï Amplifying gate Typical Applications*

ï DC motor control (e. g. for machine tools)

ï Controlled rectifiers (e. g. for battery charging)

ï AC controllers (e. g. for temperature control)

ï Recommended snubber network e. g.

for VVRMS ≤ 400 V: R = 33 /32 W, C =1 µF

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:840A

Collector current Icp:1680A

Collector power dissipation Pc:2250W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

Semikron IGBT Module 1800V /840A