IXYS MEK300-06DA-12 IGBT Module

Features

• International standard packagewith DCB ceramic base plate
• Planar passivated chips
• Short recovery time
• Low switching losses
• Soft recovery behaviour
• Isolation voltage 3600 V~
• UL registered E 72873

Applications

• Antiparallel diode for high frequencyswitching devices
• Free wheeling diode in convertersand motor control circuits
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders

Advantages

• High reliability circuit operation
• Low voltage peaks for reducedprotection circuits
• Low noise switching
• Low losses

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1700V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=75°C :304A

Collector power dissipation Pc:875 W

Isolation Voltage VIsol (AC 1 minute) :3600V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Weight 150g