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Toshiba MG300Q1US51 IGBT Module

MG300Q1US51

MG300Q1US51 Toshiba High Power 300A 1200V

· Categories: IGBT Module
· Manufacturer: Toshiba
· Price: US$ 36
· Date Code: 2024+
. Available Qty: 265
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MG300Q1US51 Specification

MG300Q1US51 Product details

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT

HIGH POWER SWITHCING APPLICATIONS
MOTOR CONTROL APPLICATIONS

Maximum ratings (Tc=25°C )
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :300A
Collector current Icp 1ms Tc=25°C :600A
Collector power dissipation Pc:2500W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2~3 N·m

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