High Power & High Speed Switching
Applications
•High input impedance
•Enhancement-mode
•The electrodes are isolated from case.
Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :400A
Collector current Icp 1ms Tc=25°C :800A
Collector power dissipation Pc:2650W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.0 N·m
Shunlongwei Co. ltd.
IGBT Module / LCD Display Distributor
Customer Service
+86-755-8273 2562
