TOSHIBA MG50G2DL1 IGBT Module

Manufacturer Part Number: MG50G2DL1Part Life Cycle Code: ObsoleteIhs Manufacturer: Toshiba CORPPackage Description: FLANGE MOUNT, R-PUFM-X6Pin Count: 6Manufacturer: Toshiba America Electronic ComponentsRisk Rank: 5.78Case Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 450 VConfiguration: 2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 100JESD-30 Code: R-PUFM-X6Number of Elements: 2Number of Terminals: 6Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON TRANSISTOR 50 A, 450 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-80A1A, 6 PIN, BIP General Purpose Power