NIEC PAH15016 IGBT Module

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
VCES Repetitive Peak Off-State Voltage 1600V
VGES Gate-Emitter voltage:±20V
±lc Average Rectified Output Current Half sine waveTC= 73°C 150A
RMS On-State Current ITRMS 235 A
Surge On-State Current 50Hz half-sine wave, 1 pulse ITSM 3200 A
Peak Gate Power PGM 5 W
Tj Junction Temperature -20~+100°C
Tstg Storage Temperature -40~+125°C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500V
Mounting screw torque M6 2.5~3.5 N·m
Applications: Likely used in power conversion, motor control, or high-voltage switching systems.
Graphical Data: Refer to the original document for curves like I Ovs. T j, surge current ratings, and thermal impedance.
Weight 480g