FT150R12KE3G_B4 Infineon 1200V 150A EconoPACK™ 3 IGBT Module

FT150R12KE3G_B4 IGBT Module In-stock / Infineon: 1200V 150A. Reliable thermal performance. 90-day warranty, three-phase motor drive. Global shipping. Get quote.

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· Manufacturer: Infineon
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Content last revised on April 14, 2026

FT150R12KE3G_B4 Infineon 1200V 150A IGBT Module

The FT150R12KE3G_B4 delivers exceptional conduction efficiency and robust thermal stability for heavy-duty three-phase inverters. Key specifications include a 1200V blocking capacity, 150A nominal current, 1.7V Vce(sat), and an Rth(j-c) of 0.18 K/W. This EconoPACK™ 3 design minimizes thermal impedance and maximizes power density. What is the primary benefit of the _B4 terminal configuration? It significantly enhances mechanical resilience under severe thermal cycling conditions. For 400V-class industrial drives prioritizing thermal margin, this 1200V module is the optimal choice.

Application Scenarios & Value

Achieving System-Level Benefits in Factory Automation

Engineers often face daunting thermal constraints when scaling up three-phase inverter designs for industrial applications. The FT150R12KE3G_B4 directly addresses this persistent bottleneck. In heavy-duty conveyor systems, initial motor starting surge currents demand substantial thermal headroom. By leveraging the 150A nominal current rating alongside the low 0.18 K/W junction-to-case thermal resistance, designers maintain safe junction temperatures even during severe overload spikes.

Integration into Uninterruptible Power Supply (UPS) architectures also benefits heavily from the module's efficient die structure, which curbs steady-state losses during 24/7 continuous operation. While this unit excels in standard 400V line deployments, systems requiring massive parallel scaling might look elsewhere. For environments demanding higher current throughput, the related SKM300GA123D offers a robust 300A capacity to manage more extreme loads.

Technical Deep Dive

Decoding the TrenchStop™ Architecture and Thermal Mechanics

The underlying physics of the FT150R12KE3G_B4 hinge on the TrenchStop™ IGBT3 technology developed by Infineon. Unlike older planar structures, the trench-gate layout restricts electron flow vertically, significantly lowering the saturation voltage. Think of it as widening a highway while simultaneously removing toll booths; the current encounters far less resistance, yielding a typical 1.7V Vce(sat) that drastically cuts continuous conduction losses. Furthermore, the embedded field-stop layer permits a thinner die profile, accelerating switching transients without sacrificing voltage blocking capabilities.

The proven EconoPACK™ 3 packaging also plays a pivotal role in the module's thermal management. It utilizes an advanced direct copper bonded (DCB) substrate. We can compare the DCB substrate to an industrial shock absorber. Just as a shock absorber dissipates sudden mechanical impacts, the DCB structure rapidly spreads localized heat spikes away from the silicon die, sustaining the 700W maximum power dissipation safely. This exact structural integrity prevents wire-bond liftoff during the intense thermal gradients typical of Active Front End (AFE) topologies.

Key Parameter Overview

Highlighting Critical Metrics for Inverter Sizing

Technical Metric Value Engineering Value
Collector-Emitter Voltage (Vces) 1200V Provides sufficient voltage overhead for 400VAC line fluctuations.
Continuous Collector Current (Ic) 150A Sustains high power delivery in heavy-duty automated setups.
Collector-Emitter Saturation Voltage 1.7V Reduces static losses, increasing long-term system efficiency.
Thermal Resistance (RthJC) 0.18 K/W Accelerates heat transfer, preventing die damage during current surges.
Maximum Power Dissipation (Ptot) 700W Ensures reliable operation during peak switching and overload states.

Download the FT150R12KE3G_B4 datasheet for detailed specifications and performance curves.

Frequently Asked Questions

Resolving Common Field Implementation Queries

  • How does the 0.18 K/W Rth(j-c) impact heatsink selection?
    It allows the use of more compact air-cooled heatsinks by transferring heat efficiently, thereby reducing overall system volume and mechanical footprint.
  • What makes the 1.7V Vce(sat) advantageous for UPS architectures?
    This remarkably low saturation voltage minimizes steady-state conduction losses, which is critical for maximizing base efficiency during continuous operation.
  • Can the FT150R12KE3G_B4 handle short-circuit conditions in motor drives?
    Yes, the integrated IGBT3 field-stop technology provides robust short-circuit withstand capability, essential for surviving sudden load faults in harsh environments.
  • What does the _B4 suffix signify in this Infineon EconoPACK module?
    It denotes specialized mechanical configurations regarding terminal design and baseplate optimizations, specifically implemented to increase resistance against vibration and thermal cycling.
  • Is this 1200V module suitable for high-frequency resonant switching?
    No, the KE3 generation excels in hard-switching up to moderate frequencies. Scaling high-frequency systems requires specialized resonant variants to remain competitive in next-generation grid topologies.

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