Content last revised on November 15, 2024
PM150RRA060 Description
IGBT Power Transistor Module, 150 Amp, 600 Volt. 1.21 lbs
Target_Applications
PM150RRA060 could be used in Inverters, UPS, Motion/Servo Control, AC Motor Control, Power Supplies
Features
a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1μm fine rule process.For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverserecovery characteristics.
c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting holeis same as S-series 3rd generation IPM.
•3φ 150A, 600V Current-sense IGBT for 15kHz switching
• 50A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-current, short-circuit, over-temperature & under-voltage(P-Fo available from upper leg devices)
• Acoustic noise-less 15/18.5kW class inverter application
• UL RecognizedYellow Card No.E80276(N) File No.E80271
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :150A
Collector current Icp 1ms Tc=25°C :600A
Collector power dissipation Pc:416W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2.5~3.5 N·m
Weight 560g
