IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2N3819

2N3819

2N3819 RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92, TO-92, 3 PIN; 2N3819
TIP140

TIP140

TIP140 10A, 60V, NPN, Si, POWER TRANSISTOR; TIP140
RXT2222AT100

RXT2222AT100

RXT2222AT100 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,; RXT2222AT100
MCMA265PD1600KB

MCMA265PD1600KB

MCMA265PD1600KB Silicon Controlled Rectifier, 421A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, ROHS COMPLIANT, Y1, 5 PIN; MCMA265PD1600KB
VI-2T2-EW

VI-2T2-EW

VI-2T2-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-2T2-EW
APTGT50DA120D1G

APTGT50DA120D1G

APTGT50DA120D1G Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; APTGT50DA120D1G
M1MA142WKT1G

M1MA142WKT1G

M1MA142WKT1G 80 V Common Cathode Switching Diode, SC-70 (SOT-323) 3 LEAD, 3000-REEL; M1MA142WKT1G
FS300R17KE3

FS300R17KE3

FS300R17KE3 IGBT Module In-stock / Infineon: 1700V 300A Sixpack. High efficiency industrial drives. 90-day warranty. Global fast shipping. Get quote.
APTGF150SK120TG

APTGF150SK120TG

APTGF150SK120TG Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, MODULE-12; APTGF150SK120TG
IRG4BC40WPBF

IRG4BC40WPBF

IRG4BC40WPBF Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3; IRG4BC40WPBF