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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

BDW63C-S

BDW63C-S

BDW63C-S Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3; BDW63C-S
VS-25RIA60

VS-25RIA60

VS-25RIA60 Silicon Controlled Rectifier,; VS-25RIA60
PD90FG80

PD90FG80

PD90FG80 Silicon Controlled Rectifier, 90000mA I(T), 800V V(RRM); PD90FG80
HTZ280H20K

HTZ280H20K

HTZ280H20K Rectifier Diode, 1 Phase, 2 Element, 4.7A, 20000V V(RRM), Silicon, ZH, 3 PIN; HTZ280H20K
VI-21K-EU

VI-21K-EU

VI-21K-EU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-21K-EU
PM200DHA060

PM200DHA060

PM200DHA060 AC Motor Controller; PM200DHA060
S8X8ES2AP

S8X8ES2AP

S8X8ES2AP Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-92, TO-92, 3 PIN; S8X8ES2AP
CM50MD1-12H

CM50MD1-12H

CM50MD1-12H Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel,; CM50MD1-12H
A70Q400-4

A70Q400-4

A70Q400-4 Electric Fuse, Fast Blow, 400A, 700VAC, 650VDC, 100000A (IR), Inline/holder,; A70Q400-4
MSCD36-18

MSCD36-18

MSCD36-18 Rectifier Diode, 1 Phase, 2 Element, 36A, 1800V V(RRM), Silicon, CASE D1, 3 PIN; MSCD36-18