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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

V300C12C150AN

V300C12C150AN

V300C12C150AN DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid; V300C12C150AN
BCX6916TA

BCX6916TA

BCX6916TA Transistor; BCX6916TA
CM75TF-24H

CM75TF-24H

CM75TF-24H IGBT Module In-stock / Mitsubishi: 1200V 75A. Low loss switching, 6-pack design. 90-day warranty, industrial motor drive. Check stock online.
2N1912

2N1912

2N1912 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 150V V(DRM), 150V V(RRM), 1 Element; 2N1912
IRFU3710ZPBF

IRFU3710ZPBF

IRFU3710ZPBF Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3; IRFU3710ZPBF
VUO60-14NO3

VUO60-14NO3

VUO60-14NO3 Bridge Rectifier Diode, 3 Phase, 75A, 1400V V(RRM), Silicon, ROHS COMPLIANT, MODULE-7; VUO60-14NO3
VI-J7H-CZ

VI-J7H-CZ

VI-J7H-CZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J7H-CZ
MBRT12080

MBRT12080

MBRT12080 80V 120A Silicon Schottky Rectifier in Three Tower Package; MBRT12080
MIO1800-17E10

MIO1800-17E10

MIO1800-17E10 Insulated Gate Bipolar Transistor, 1800A I(C), 1700V V(BR)CES, N-Channel, MODULE-9; MIO1800-17E10
VI-24N-EY

VI-24N-EY

VI-24N-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-24N-EY