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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-25L-CV

VI-25L-CV

VI-25L-CV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-25L-CV
NSBC115TPDP6T5G

NSBC115TPDP6T5G

NSBC115TPDP6T5G Complementary Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL; NSBC115TPDP6T5G
V300B2C100AN

V300B2C100AN

V300B2C100AN DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid; V300B2C100AN
SG2000W22

SG2000W22

SG2000W22 Silicon Controlled Rectifier, 700 A, 1800 V, GATE TURN-OFF SCR; SG2000W22
2SD2015

2SD2015

2SD2015 Power Bipolar Transistor, 4A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FM20, TO-220F, 3 PIN; 2SD2015
SMS3922-015LF

SMS3922-015LF

SMS3922-015LF Mixer Diode, Silicon, GREEN, PLASTIC PACKAGE-4; SMS3922-015LF
S6016R

S6016R

S6016R Silicon Controlled Rectifier, 16A I(T)RMS, 16000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220R, 3 PIN; S6016R
MUN2214T1

MUN2214T1

MUN2214T1 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN; MUN2214T1
MDA710-22N1

MDA710-22N1

MDA710-22N1 Rectifier Diode, 1 Phase, 2 Element, 1198A, 2200V V(RRM), Silicon,; MDA710-22N1
VRF191

VRF191

VRF191 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, T11, 6 PIN; VRF191