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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MITB10WB1200TMH

MITB10WB1200TMH

MITB10WB1200TMH Insulated Gate Bipolar Transistor, 17A I(C), 1200V V(BR)CES, N-Channel, MODULE-23; MITB10WB1200TMH
VI-J7J-IZ

VI-J7J-IZ

VI-J7J-IZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J7J-IZ
KD421210

KD421210

KD421210 Power Bipolar Transistor, 100A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 15 Pin, D32, 15 PIN; KD421210
VI-2TL-CU

VI-2TL-CU

VI-2TL-CU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid,; VI-2TL-CU
SI4909DY-T1-GE3

SI4909DY-T1-GE3

SI4909DY-T1-GE3 Small Signal Field-Effect Transistor, 8A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8; SI4909DY-T1-GE3
IXYP50N65C3

IXYP50N65C3

IXYP50N65C3 Insulated Gate Bipolar Transistor,; IXYP50N65C3
MBR30030CT

MBR30030CT

MBR30030CT Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 30V V(RRM), Silicon,; MBR30030CT
VI-J2M-IZ

VI-J2M-IZ

VI-J2M-IZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J2M-IZ
VI-BNR-EW

VI-BNR-EW

VI-BNR-EW DC-DC Booster Module, 100W; VI-BNR-EW
IHY20N135R3

IHY20N135R3

IHY20N135R3 Insulated Gate Bipolar Transistor, 40A I(C), 1350V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC, TO-247HC, 3 PIN; IHY20N135R3