QJS0512001 Power Field-Effect Transistor, 120A I(D), 500V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-5; QJS0512001
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.