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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

APTGLQ200H120G

APTGLQ200H120G

APTGLQ200H120G Insulated Gate Bipolar Transistor, 350A I(C), 1200V V(BR)CES; APTGLQ200H120G
T627082554DN

T627082554DN

T627082554DN Silicon Controlled Rectifier, 400A I(T)RMS, 400000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, CASE T62, 3 PIN; T627082554DN
VI-J4T-CY

VI-J4T-CY

VI-J4T-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J4T-CY
RM250DZ-M

RM250DZ-M

RM250DZ-M Rectifier Diode, 1 Phase, 2 Element, 250A, 400V V(RRM), Silicon,; RM250DZ-M
VI-B2N-IV

VI-B2N-IV

VI-B2N-IV DC-DC Booster Module; VI-B2N-IV
MPS2369ARLRP

MPS2369ARLRP

MPS2369ARLRP Switching Transistors, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; MPS2369ARLRP
LX803ME

LX803ME

LX803ME 4 Quadrant Logic Level TRIAC, 600V V(DRM), 0.8A I(T)RMS, TO-92, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3; LX803ME
F1857SDK1000

F1857SDK1000

F1857SDK1000 Silicon Controlled Rectifier, 55000mA I(T), 1000V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-7; F1857SDK1000
T507028034AQ

T507028034AQ

T507028034AQ Silicon Controlled Rectifier, 125A I(T)RMS, 125000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507028034AQ
APT100GT120JU2

APT100GT120JU2

APT100GT120JU2 Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4; APT100GT120JU2