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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

C380E

C380E

C380E Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 500V V(DRM), 500V V(RRM), 1 Element, T62, 3 PIN; C380E
VS-ST230C16C0

VS-ST230C16C0

VS-ST230C16C0 Silicon Controlled Rectifier,; VS-ST230C16C0
V24C12T100AL2

V24C12T100AL2

V24C12T100AL2 DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid; V24C12T100AL2
ZTX853STOB

ZTX853STOB

ZTX853STOB Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3; ZTX853STOB
MSCD70-16

MSCD70-16

MSCD70-16 Rectifier Diode, 1 Phase, 2 Element, 70A, 1600V V(RRM), Silicon, CASE D1, 3 PIN; MSCD70-16
VI-B50-EW

VI-B50-EW

VI-B50-EW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B50-EW
6MBI150U4B-120

6MBI150U4B-120

6MBI150U4B-120 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; 6MBI150U4B-120
MBRB3045CT-1G

MBRB3045CT-1G

MBRB3045CT-1G Schottky Barrier Rectifier, 30 A, 45 V, MECHANICAL OUTLINE, 50-TUBE; MBRB3045CT-1G
VS-2N685

VS-2N685

VS-2N685 Silicon Controlled Rectifier, 25A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-208AA, TO-48, 2 PIN; VS-2N685
F1857SD600

F1857SD600

F1857SD600 Silicon Controlled Rectifier, 86.35A I(T)RMS, 55000mA I(T), 600V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-7; F1857SD600