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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

SW14CXC32C

SW14CXC32C

SW14CXC32C DIODE 8400 A, 1400 V, SILICON, RECTIFIER DIODE, Rectifier Diode; SW14CXC32C
VI-BW2-CW

VI-BW2-CW

VI-BW2-CW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-BW2-CW
IXXK110N65B4H1

IXXK110N65B4H1

IXXK110N65B4H1 Insulated Gate Bipolar Transistor, 240A I(C), 650V V(BR)CES, N-Channel,; IXXK110N65B4H1
DRA2123E0L

DRA2123E0L

DRA2123E0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN; DRA2123E0L
VI-26B-CX

VI-26B-CX

VI-26B-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-26B-CX
VI-JWM-IY

VI-JWM-IY

VI-JWM-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-JWM-IY
VI-JWL-CZ

VI-JWL-CZ

VI-JWL-CZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-JWL-CZ
SG400U11

SG400U11

SG400U11 Silicon Controlled Rectifier, 150 A, 1600 V, GATE TURN-OFF SCR; SG400U11
FMC7G10US60

FMC7G10US60

FMC7G10US60 Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 21PM-AA, 21 PIN; FMC7G10US60
CS35-14IO4

CS35-14IO4

CS35-14IO4 Silicon Controlled Rectifier, 120A I(T)RMS, 60000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN; CS35-14IO4