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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

UMA10NTR

UMA10NTR

UMA10NTR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, UMT5, SC-88A, 5 PIN; UMA10NTR
T507027044AQ

T507027044AQ

T507027044AQ Silicon Controlled Rectifier, 110A I(T)RMS, 110000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507027044AQ
APT40GF120JRDQ2

APT40GF120JRDQ2

APT40GF120JRDQ2 Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4; APT40GF120JRDQ2
NSBA114TF3T5G

NSBA114TF3T5G

NSBA114TF3T5G PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 10 k, none, SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL; NSBA114TF3T5G
SEMIX353GB126HDS

SEMIX353GB126HDS

SEMIX353GB126HDS Insulated Gate Bipolar Transistor, 360A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 3S, 20 PIN; SEMIX353GB126HDS
IRF9510PBF

IRF9510PBF

IRF9510PBF Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3; IRF9510PBF
ZC829ATC

ZC829ATC

ZC829ATC Variable Capacitance Diode, 8.2pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3; ZC829ATC
VI-21H-EV

VI-21H-EV

VI-21H-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-21H-EV
2N5060G

2N5060G

2N5060G Silicon Controlled Rectifier - SCR, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX; 2N5060G
VI-27Z-CV

VI-27Z-CV

VI-27Z-CV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-27Z-CV