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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

GBU1001

GBU1001

GBU1001 Bridge Rectifier Diode, 1 Phase, 10A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBU, 4 PIN; GBU1001
ACST830-8FP

ACST830-8FP

ACST830-8FP Overvoltage protected AC switch; ACST830-8FP
CD430890C

CD430890C

CD430890C Silicon Controlled Rectifier; CD430890C
VI-B7P-CU

VI-B7P-CU

VI-B7P-CU DC-DC Booster Module; VI-B7P-CU
VMO650-01F

VMO650-01F

VMO650-01F Power Field-Effect Transistor, 690A I(D), 100V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; VMO650-01F
CD430840B

CD430840B

CD430840B Silicon Controlled Rectifier, 63A I(T)RMS, 40000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, POW-R-BLOK-7; CD430840B
VI-26K-IY

VI-26K-IY

VI-26K-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-26K-IY
SG2003J-883B

SG2003J-883B

SG2003J-883B Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon,; SG2003J-883B
BD244-S

BD244-S

BD244-S Power Bipolar Transistor, 6A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3; BD244-S
CM200DX-24S

CM200DX-24S

CM200DX-24S Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-11