APT60GF120JRDQ3 Insulated Gate Bipolar Transistor, 149A I(C), 1200V V(BR)CES,; APT60GF120JRDQ3
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.