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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MJF18004

MJF18004

MJF18004 5.0 A, 450 V NPN Bipolar Power Transistor, TO-220 3 LEAD FULLPAK, 50-TUBE; MJF18004
T72H043574DN

T72H043574DN

T72H043574DN Silicon Controlled Rectifier, 550A I(T)RMS, 550000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, CASE T72, 3 PIN; T72H043574DN
2SD2082

2SD2082

2SD2082 Power Bipolar Transistor, 16A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FM100, TO-3PF, 3 PIN; 2SD2082
IRFS3107TRLPBF

IRFS3107TRLPBF

IRFS3107TRLPBF Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3; IRFS3107TRLPBF
ZTX1147ASTZ

ZTX1147ASTZ

ZTX1147ASTZ Diodes Power High gain transistor 12V 4A
VI-B4H-IW

VI-B4H-IW

VI-B4H-IW DC-DC Booster Module, 100W; VI-B4H-IW
C436M

C436M

C436M Silicon Controlled Rectifier, 659.4A I(T)RMS, 450000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, T7H, 3 PIN; C436M
SKM191F

SKM191F

SKM191F Power Field-Effect Transistor, 28A I(D), 1000V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; SKM191F
CD421890B

CD421890B

CD421890B Silicon Controlled Rectifier, 150A I(T)RMS, 90000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, POW-R-BLOK-5; CD421890B
APTGF180H60G

APTGF180H60G

APTGF180H60G Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-12; APTGF180H60G