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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VMO650-01F

VMO650-01F

VMO650-01F Power Field-Effect Transistor, 690A I(D), 100V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; VMO650-01F
CD430840B

CD430840B

CD430840B Silicon Controlled Rectifier, 63A I(T)RMS, 40000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, POW-R-BLOK-7; CD430840B
VI-26K-IY

VI-26K-IY

VI-26K-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-26K-IY
SG2003J-883B

SG2003J-883B

SG2003J-883B Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon,; SG2003J-883B
BD244-S

BD244-S

BD244-S Power Bipolar Transistor, 6A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3; BD244-S
CM200DX-24S

CM200DX-24S

CM200DX-24S Mitsubishi Electric IGBT module for heavy-duty variable-frequency AC motor drives. Rated 1200 V and 200 A; contact Shunlongwei for sourcing details.
MCD26-14IO1B

MCD26-14IO1B

MCD26-14IO1B Silicon Controlled Rectifier, 50A I(T)RMS, 27000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-240AA, TO-240AA, 5 PIN; MCD26-14IO1B
170M7104

170M7104

170M7104 Electric Fuse, 3000A, 690VAC, 200000A (IR), Inline/holder,; 170M7104
UMA6NTR

UMA6NTR

UMA6NTR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, UMT5, SC-88A, 5 PIN; UMA6NTR
C398P

C398P

C398P Silicon Controlled Rectifier, 659.4A I(T)RMS, 450000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, T72, 3 PIN; C398P