VMO650-01F Power Field-Effect Transistor, 690A I(D), 100V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; VMO650-01F
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.