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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

T507104044AQ

T507104044AQ

T507104044AQ Silicon Controlled Rectifier, 63A I(T)RMS, 63000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507104044AQ
KBP02G

KBP02G

KBP02G Bridge Rectifier Diode, 1 Phase, 1.5A, 200V V(RRM), Silicon, PLASTIC, KBP, 4 PIN; KBP02G
VI-26B-IX

VI-26B-IX

VI-26B-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-26B-IX
CBS2004828

CBS2004828

CBS2004828 DC-DC Regulated Power Supply Module, 1 Output, 201.6W, Hybrid, ROHS COMPLIANT, PACKAGE-9; CBS2004828
IXYH40N120C3D1

IXYH40N120C3D1

IXYH40N120C3D1 Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXYH40N120C3D1
PCHMB75A6

PCHMB75A6

PCHMB75A6 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-5; PCHMB75A6
VI-212-IW

VI-212-IW

VI-212-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-212-IW
VI-231-IU

VI-231-IU

VI-231-IU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-231-IU
RT1A040ZPTR

RT1A040ZPTR

RT1A040ZPTR Power Field-Effect Transistor, 4A I(D), 12V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSST8, 8 PIN; RT1A040ZPTR
2N6341G

2N6341G

2N6341G 25 A, 150 V NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY; 2N6341G