SEMIX151GD128DS Insulated Gate Bipolar Transistor, 170A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 13S, 20 PIN; SEMIX151GD128DS
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.