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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2SB1183TL

2SB1183TL

2SB1183TL Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, CPT3, SC-63, 3 PIN; 2SB1183TL
VI-J1Z-CZ

VI-J1Z-CZ

VI-J1Z-CZ DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-J1Z-CZ
PN4117

PN4117

PN4117 Small Signal Field-Effect Transistor; PN4117
ESAG01-01D

ESAG01-01D

ESAG01-01D Rectifier Diode, 1 Phase, 2 Element, 50A, 100V V(RRM), Silicon, MODULE-2; ESAG01-01D
2SCR533PT100

2SCR533PT100

2SCR533PT100 Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, 3 PIN; 2SCR533PT100
MJF18004

MJF18004

MJF18004 5.0 A, 450 V NPN Bipolar Power Transistor, TO-220 3 LEAD FULLPAK, 50-TUBE; MJF18004
T72H043574DN

T72H043574DN

T72H043574DN Silicon Controlled Rectifier, 550A I(T)RMS, 550000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, CASE T72, 3 PIN; T72H043574DN
2SD2082

2SD2082

2SD2082 Power Bipolar Transistor, 16A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FM100, TO-3PF, 3 PIN; 2SD2082
IRFS3107TRLPBF

IRFS3107TRLPBF

IRFS3107TRLPBF Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3; IRFS3107TRLPBF
ZTX1147ASTZ

ZTX1147ASTZ

ZTX1147ASTZ Diodes Power High gain transistor 12V 4A