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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

KSE340S

KSE340S

KSE340S NPN Epitaxial Silicon Transistor, 1920-TUBE; KSE340S
T5071440B4AQ

T5071440B4AQ

T5071440B4AQ Silicon Controlled Rectifier, 63A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T5071440B4AQ
V375A12T600AL

V375A12T600AL

V375A12T600AL DC-DC Regulated Power Supply Module, 1 Output, 600W, Hybrid; V375A12T600AL
IXYP8N90C3D1

IXYP8N90C3D1

IXYP8N90C3D1 Insulated Gate Bipolar Transistor, 20A I(C), 900V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN; IXYP8N90C3D1
L4N3

L4N3

L4N3 4 Quadrant Logic Level TRIAC, 400V V(DRM), 1A I(T)RMS, MODIFIED DO-214; L4N3
CPT60145

CPT60145

CPT60145 Rectifier Diode, Schottky, 1 Phase, 2 Element, 300A, 45V V(RRM), Silicon, PACKAGE-2; CPT60145
SK006VTP

SK006VTP

SK006VTP Silicon Controlled Rectifier, 6A I(T)RMS, 6000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-251AA, ROHS COMPLIANT, PLASTIC, V/IPAK-3; SK006VTP
KSB23020

KSB23020

KSB23020 Power Bipolar Transistor, 200A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, D14, 4 PIN; KSB23020
VI-21R-EY

VI-21R-EY

VI-21R-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-21R-EY
FDMS86520L

FDMS86520L

FDMS86520L N-Channel PowerTrench® MOSFET 60V, 22A, 8.2mΩ, 3000-REEL; FDMS86520L