MIXA101W1200EH Insulated Gate Bipolar Transistor, 155A I(C), 1200V V(BR)CES, N-Channel, MODULE-19; MIXA101W1200EH
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.