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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

FMM22-05PF

FMM22-05PF

FMM22-05PF Power Field-Effect Transistor, 13A I(D), 500V, 0.27ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4-PAC-5; FMM22-05PF
F1827CCH1600

F1827CCH1600

F1827CCH1600 Silicon Controlled Rectifier, 25000mA I(T), 1600V V(RRM), 1 Element, ROHS COMPLIANT PACKAGE-5; F1827CCH1600
T507108074AQ

T507108074AQ

T507108074AQ Silicon Controlled Rectifier, 125A I(T)RMS, 125000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507108074AQ
2N5638RLRAG

2N5638RLRAG

2N5638RLRAG JFET Chopper Transistors, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL; 2N5638RLRAG
MSCD200-08

MSCD200-08

MSCD200-08 Rectifier Diode, 1 Phase, 2 Element, 200A, 800V V(RRM), Silicon, CASE D2, 3 PIN; MSCD200-08
PN2222ARLRP

PN2222ARLRP

PN2222ARLRP 600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN; PN2222ARLRP
CPT50130

CPT50130

CPT50130 Rectifier Diode, Schottky, 1 Phase, 2 Element, 250A, 30V V(RRM), Silicon, PACKAGE-2; CPT50130
PP3-5-12

PP3-5-12

PP3-5-12 Analog Circuit,; PP3-5-12
T607061834BT

T607061834BT

T607061834BT Silicon Controlled Rectifier, 275A I(T)RMS, 275000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-93, TO-93, 3 PIN; T607061834BT
ET191

ET191

ET191 Power Bipolar Transistor, 12A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN; ET191