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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

RSR025N03TL

RSR025N03TL

RSR025N03TL Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN; RSR025N03TL
BC212

BC212

BC212 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN; BC212
SEMIX151GD128DS

SEMIX151GD128DS

SEMIX151GD128DS Insulated Gate Bipolar Transistor, 170A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 13S, 20 PIN; SEMIX151GD128DS
VI-B6P-IV

VI-B6P-IV

VI-B6P-IV DC-DC Booster Module, 150W; VI-B6P-IV
CD421290B

CD421290B

CD421290B Silicon Controlled Rectifier, 150A I(T)RMS, 90000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, POW-R-BLOK-5; CD421290B
2N6427RLRAG

2N6427RLRAG

2N6427RLRAG NPN Bipolar Darlington Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL; 2N6427RLRAG
T507127034AQ

T507127034AQ

T507127034AQ Silicon Controlled Rectifier, 110A I(T)RMS, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507127034AQ
VI-BWF-IW

VI-BWF-IW

VI-BWF-IW DC-DC Booster Module, 100W; VI-BWF-IW
TD36N16

TD36N16

TD36N16 Silicon Controlled Rectifier, 80A I(T)RMS, 36000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, MODULE-5; TD36N16
7MBP75RA120-55

7MBP75RA120-55

7MBP75RA120-55 Fuji Electric PIM for industrial inverter welders. Rated 1200V and 75A. Source through Shunlongwei worldwide.