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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-26M-IV

VI-26M-IV

VI-26M-IV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-26M-IV
IRFK4HE50

IRFK4HE50

IRFK4HE50 Power Field-Effect Transistor, 4-Element, Metal-oxide Semiconductor FET; IRFK4HE50
MRF6S21060NR1

MRF6S21060NR1

MRF6S21060NR1 RF Power Field-Effect Transistor; MRF6S21060NR1
VI-B1D-CU

VI-B1D-CU

VI-B1D-CU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B1D-CU
L2004F61

L2004F61

L2004F61 4 Quadrant Logic Level TRIAC, 200V V(DRM), 4A I(T)RMS, TO-202, TO-202, 3 PIN; L2004F61
MDR100A30

MDR100A30

MDR100A30 Rectifier Diode, 1 Element, 100A, 300V V(RRM),; MDR100A30
VI-J61-IX

VI-J61-IX

VI-J61-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J61-IX
BD243-S

BD243-S

BD243-S Power Bipolar Transistor, 6A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, FM-3; BD243-S
DMN2019UTS-13

DMN2019UTS-13

DMN2019UTS-13 Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; DMN2019UTS-13
2N5064G

2N5064G

2N5064G Silicon Controlled Rectifier - SCR, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX; 2N5064G