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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

T607061834BT

T607061834BT

T607061834BT Silicon Controlled Rectifier, 275A I(T)RMS, 275000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-93, TO-93, 3 PIN; T607061834BT
ET191

ET191

ET191 Power Bipolar Transistor, 12A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN; ET191
MIXA101W1200EH

MIXA101W1200EH

MIXA101W1200EH Insulated Gate Bipolar Transistor, 155A I(C), 1200V V(BR)CES, N-Channel, MODULE-19; MIXA101W1200EH
ZTX749STOB

ZTX749STOB

ZTX749STOB Transistor; ZTX749STOB
ZC833ATC

ZC833ATC

ZC833ATC Variable Capacitance Diode, 33pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3; ZC833ATC
CM150DX-24S

CM150DX-24S

CM150DX-24S Mitsubishi Electric IGBT module for commercial string inverter and micro-grid storage repair. Rated 1200 V and 150 A. Request availability.
J305

J305

J305 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA; J305
VI-25P-CU

VI-25P-CU

VI-25P-CU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-25P-CU
HS246150R

HS246150R

HS246150R Rectifier Diode, Schottky, 1 Phase, 1 Element, 240A, 150V V(RRM), Silicon, PACKAGE-1; HS246150R
KBU3502-G

KBU3502-G

KBU3502-G Bridge Rectifier Diode, 35A, 200V V(RRM),; KBU3502-G