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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

KSH2955TM

KSH2955TM

KSH2955TM PNP Epitaxial Silicon Transistor, 2500-REEL; KSH2955TM
GB50XF60K

GB50XF60K

GB50XF60K Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, ECONO26PACK-17; GB50XF60K
2SC4466

2SC4466

2SC4466 Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN; 2SC4466
Q6040JH6TP

Q6040JH6TP

Q6040JH6TP TRIAC, 600V V(DRM), 40A I(T)RMS, ROHS COMPLIANT, PLASTIC, TO-218X, 3 PIN; Q6040JH6TP
2SA1709S-AN

2SA1709S-AN

2SA1709S-AN Bipolar Transistor, -100V, -2A, Low VCE(sat), (PNP)NPN Single NMP, NMP (Taping), 2500-REEL; 2SA1709S-AN
VI-B5P-CV

VI-B5P-CV

VI-B5P-CV DC-DC Booster Module, 150W; VI-B5P-CV
VI-JTW-EZ

VI-JTW-EZ

VI-JTW-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-JTW-EZ
VI-26P-EY

VI-26P-EY

VI-26P-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-26P-EY
S8X8ES2RP

S8X8ES2RP

S8X8ES2RP Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-92, TO-92, 3 PIN; S8X8ES2RP
VI-B2V-IU

VI-B2V-IU

VI-B2V-IU DC-DC Booster Module; VI-B2V-IU