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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

B512FSE-2T

B512FSE-2T

B512FSE-2T Silicon Controlled Rectifier, 27000mA I(T), 600V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-6; B512FSE-2T
BC307BG

BC307BG

BC307BG 100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN; BC307BG
IRKL250-08

IRKL250-08

IRKL250-08 Silicon Controlled Rectifier, 555A I(T)RMS, 250000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, MAGN-A-PAK-5; IRKL250-08
CM30TF-24H

CM30TF-24H

CM30TF-24H Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel; CM30TF-24H
MG100G2CL1

MG100G2CL1

MG100G2CL1 TRANSISTOR 100 A, 450 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-68A1A, 5 PIN, BIP General Purpose Power; MG100G2CL1
DIM1200DDM17-E

DIM1200DDM17-E

DIM1200DDM17-E Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, D, 10 PIN; DIM1200DDM17-E
ATF-33143-TR2G

ATF-33143-TR2G

ATF-33143-TR2G RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN; ATF-33143-TR2G
MSCD70-08

MSCD70-08

MSCD70-08 Rectifier Diode, 1 Phase, 2 Element, 70A, 800V V(RRM), Silicon, CASE D1, 3 PIN; MSCD70-08
MDD72-08N1B

MDD72-08N1B

MDD72-08N1B Rectifier Diode, 1 Phase, 2 Element, 99A, 800V V(RRM), Silicon, TO-240AA, TO-240AA, 3 PIN; MDD72-08N1B
DIM2400ESM17-E

DIM2400ESM17-E

DIM2400ESM17-E Insulated Gate Bipolar Transistor, 2400A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, E, 9 PIN; DIM2400ESM17-E