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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2N1916

2N1916

2N1916 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element; 2N1916
IXGH38N60U1

IXGH38N60U1

IXGH38N60U1 Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD; IXGH38N60U1
2MBI75J-060

2MBI75J-060

2MBI75J-060 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES,; 2MBI75J-060
VI-B2V-IV

VI-B2V-IV

VI-B2V-IV DC-DC Booster Module; VI-B2V-IV
UFT14280

UFT14280

UFT14280 Rectifier Diode, 1 Phase, 2 Element, 70A, 800V V(RRM), Silicon, TO-249, TO-249, 3 PIN; UFT14280
FMMT551TC

FMMT551TC

FMMT551TC 1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, SOT-23, 3 PIN; FMMT551TC
VI-J64-EZ

VI-J64-EZ

VI-J64-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J64-EZ
2SK3557-7-TB-E

2SK3557-7-TB-E

2SK3557-7-TB-E N-Channel JFET, 15V, 10 to 32mA, 35mS, CP, SC-59 / CP, 3000-REEL; 2SK3557-7-TB-E
QBS100YH-A

QBS100YH-A

QBS100YH-A DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid; QBS100YH-A
DRA2514E0L

DRA2514E0L

DRA2514E0L Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN; DRA2514E0L