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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

PBPC601

PBPC601

PBPC601 Bridge Rectifier Diode, 1 Phase, 4A, 50V V(RRM), Silicon, PLASTIC, PBPC-6, 4 PIN; PBPC601
MAC997A8G

MAC997A8G

MAC997A8G Sensitive Gate Triac, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX; MAC997A8G
2N7002W-TP

2N7002W-TP

2N7002W-TP Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3; 2N7002W-TP
VI-2WB-EV

VI-2WB-EV

VI-2WB-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid, MODULE-9; VI-2WB-EV
MPSW42G

MPSW42G

MPSW42G 1.0 W High Voltage NPN Bipolar Transistor, TO-92 (TO-226) 1 WATT, 5000-BLKBX; MPSW42G
IRLML5103GTRPBF

IRLML5103GTRPBF

IRLML5103GTRPBF Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3; IRLML5103GTRPBF
2SB815-7-TB-E

2SB815-7-TB-E

2SB815-7-TB-E Bipolar Transistor, (-)15V, (-)0.7A, Low VCE(sat), (PNP)NPN Single CP, SC-59 / CP, 3000-REEL; 2SB815-7-TB-E
SD4933MR

SD4933MR

SD4933MR 50 V moisture resistant DMOS transistor for ISM applications; SD4933MR
MUBW35-12A8

MUBW35-12A8

MUBW35-12A8 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; MUBW35-12A8
STPS40L45CG-TR

STPS40L45CG-TR

STPS40L45CG-TR 45 V, 40 A dual Low Drop Power Schottky Rectifier; STPS40L45CG-TR