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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-RAM-E1

VI-RAM-E1

VI-RAM-E1 Analog Circuit, 1 Func; VI-RAM-E1
T607041574BT

T607041574BT

T607041574BT Silicon Controlled Rectifier, 235A I(T)RMS, 235000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-93, TO-93, 3 PIN; T607041574BT
W0428SF28

W0428SF28

W0428SF28 DIODE 428 A, 2800 V, SILICON, RECTIFIER DIODE, Rectifier Diode; W0428SF28
VI-J2Z-CZ

VI-J2Z-CZ

VI-J2Z-CZ DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-J2Z-CZ
PGH7516AM

PGH7516AM

PGH7516AM Trigger Device; PGH7516AM
APTGT200SK170D3G

APTGT200SK170D3G

APTGT200SK170D3G Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, MODULE-7; APTGT200SK170D3G
ND421425

ND421425

ND421425 Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, POW-R-BLOK-5; ND421425
TCR22-4

TCR22-4

TCR22-4 Silicon Controlled Rectifier, 1A I(T)RMS, 1500mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-92, TO-92. 3 PIN; TCR22-4
APT06DC60HJ

APT06DC60HJ

APT06DC60HJ Bridge Rectifier Diode, Schottky, 1 Phase, 6A, 600V V(RRM), Silicon Carbide, ROHS COMPLIANT, ISOTOP-4; APT06DC60HJ
L401E375

L401E375

L401E375 4 Quadrant Logic Level TRIAC, 400V V(DRM), 1A I(T)RMS, TO-92, TO-92, 3 PIN; L401E375