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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MAGX-000035-030000

MAGX-000035-030000

MAGX-000035-030000 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; MAGX-000035-030000
2SB1201T-TL-E

2SB1201T-TL-E

2SB1201T-TL-E Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 700-REEL; 2SB1201T-TL-E
2N6405G

2N6405G

2N6405G Silicon Controlled Rectifier, 16A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN; 2N6405G
VI-JWL-IZ

VI-JWL-IZ

VI-JWL-IZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-JWL-IZ
TM400UZ-2H

TM400UZ-2H

TM400UZ-2H Trigger Device; TM400UZ-2H
BCW72T116

BCW72T116

BCW72T116 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon; BCW72T116
VI-26M-CX

VI-26M-CX

VI-26M-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-26M-CX
GBPC35005-G

GBPC35005-G

GBPC35005-G Bridge Rectifier Diode, 35A, 50V V(RRM),; GBPC35005-G
F1827DH600

F1827DH600

F1827DH600 Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 600V V(RRM), 1 Element, ROHS COMPLIANT PACKAGE-5; F1827DH600
VI-2NR-IY

VI-2NR-IY

VI-2NR-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-2NR-IY