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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

ZXTC4591AMCTA

ZXTC4591AMCTA

ZXTC4591AMCTA Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, GREEN, PLASTIC, DFN3020B-8, 8 PIN; ZXTC4591AMCTA
VSKT250-16

VSKT250-16

VSKT250-16 Silicon Controlled Rectifier, 555A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 2 Element, MAGN-A-PAK-7; VSKT250-16
DDTC115TCA-7-F

DDTC115TCA-7-F

DDTC115TCA-7-F Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3; DDTC115TCA-7-F
APTGT50A120D1G

APTGT50A120D1G

APTGT50A120D1G Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; APTGT50A120D1G
P3Z9AAT900W

P3Z9AAT900W

P3Z9AAT900W Silicon Controlled Rectifier, 355000mA I(T), 2600V V(RRM); P3Z9AAT900W
HSMS-2865-BLKG

HSMS-2865-BLKG

HSMS-2865-BLKG Mixer Diode, C Band, Silicon, ROHS COMPLIANT PACKAGE-4; HSMS-2865-BLKG
APTGT35X120BTP3G

APTGT35X120BTP3G

APTGT35X120BTP3G Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; APTGT35X120BTP3G
QIQ0645001

QIQ0645001

QIQ0645001 Insulated Gate Bipolar Transistor, 450A I(C), 600V V(BR)CES, N-Channel,; QIQ0645001
DPF240X200NA

DPF240X200NA

DPF240X200NA Rectifier Diode, Avalanche, 1 Phase, 2 Element, 120A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4; DPF240X200NA
2SD1949T106R

2SD1949T106R

2SD1949T106R Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-70, 3 PIN; 2SD1949T106R