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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-JWR-IZ

VI-JWR-IZ

VI-JWR-IZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-JWR-IZ
T727124554DN

T727124554DN

T727124554DN Silicon Controlled Rectifier, 700A I(T)RMS, 700000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, CASE T72, 3 PIN; T727124554DN
DFM600FXS12-A

DFM600FXS12-A

DFM600FXS12-A Rectifier Diode, 1 Phase, 2 Element, 600A, 1200V V(RRM), Silicon, F, 4 PIN; DFM600FXS12-A
L4004F52

L4004F52

L4004F52 4 Quadrant Logic Level TRIAC, 400V V(DRM), 4A I(T)RMS, TO-202AB,; L4004F52
VI-J4H-CY

VI-J4H-CY

VI-J4H-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J4H-CY
2N5401RLRMG

2N5401RLRMG

2N5401RLRMG 600mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, CASE 29-11, 3 PIN; 2N5401RLRMG
VI-B12-IV

VI-B12-IV

VI-B12-IV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B12-IV
MWI75-06A7T

MWI75-06A7T

MWI75-06A7T Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19; MWI75-06A7T
BLF8G10LS-270GVJ

BLF8G10LS-270GVJ

BLF8G10LS-270GVJ RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6; BLF8G10LS-270GVJ
FM2G150US60

FM2G150US60

FM2G150US60 Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, PLASTIC, 7PM-BB, 7 PIN; FM2G150US60