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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

CM100RX-12A

CM100RX-12A

CM100RX-12A Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, MODULE-22; CM100RX-12A
SP8M7TB

SP8M7TB

SP8M7TB Power Field-Effect Transistor, 5A I(D), 30V, 0.082ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8; SP8M7TB
2SD2144STPW

2SD2144STPW

2SD2144STPW Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN; 2SD2144STPW
VI-JTW-EX

VI-JTW-EX

VI-JTW-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-JTW-EX
HSMP-3830-TR2G

HSMP-3830-TR2G

HSMP-3830-TR2G Pin Diode, 200V V(BR), Silicon, ROHS COMPLIANT PACKAGE-3; HSMP-3830-TR2G
PDMB50B12

PDMB50B12

PDMB50B12 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; PDMB50B12
TIP112

TIP112

TIP112 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin; TIP112
VI-233-IX

VI-233-IX

VI-233-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-233-IX
APTGF50A60T1G

APTGF50A60T1G

APTGF50A60T1G Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGF50A60T1G
DSEI2X30-10B

DSEI2X30-10B

DSEI2X30-10B Rectifier Diode, 1 Phase, 2 Element, 30A, 1000V V(RRM), Silicon, MINIBLOC-4; DSEI2X30-10B