IRG4BH20K-LPBF Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN; IRG4BH20K-LPBF
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.