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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

SKM300GAR123D

SKM300GAR123D

SKM300GAR123D Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, CASE D58, SEMITRANS3-7; SKM300GAR123D
MA4P7455-1225T

MA4P7455-1225T

MA4P7455-1225T Fixed Attenuator, 10MHz Min, 4000MHz Max, 2dB Insertion Loss-Max, SOT-25, 5 PIN; MA4P7455-1225T
SW02CXC935

SW02CXC935

SW02CXC935 Rectifier Diode, 1 Phase, 1 Element, 2060A, 200V V(RRM), Silicon,; SW02CXC935
VI-JT1-EZ

VI-JT1-EZ

VI-JT1-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-JT1-EZ
VI-23Z-EV

VI-23Z-EV

VI-23Z-EV DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-23Z-EV
UPA2670T1R-E2-AX

UPA2670T1R-E2-AX

UPA2670T1R-E2-AX N/A; UPA2670T1R-E2-AX
W6262ZC200

W6262ZC200

W6262ZC200 DIODE 6268 A, 2000 V, SILICON, RECTIFIER DIODE, Rectifier Diode; W6262ZC200
KBPC15005-G

KBPC15005-G

KBPC15005-G Bridge Rectifier Diode, 15A, 50V V(RRM),; KBPC15005-G
BC338-25ZL1

BC338-25ZL1

BC338-25ZL1 Transistor Silicon Plastic NPN, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; BC338-25ZL1
W1032LC560

W1032LC560

W1032LC560 DIODE 1032 A, 5600 V, SILICON, RECTIFIER DIODE, Rectifier Diode; W1032LC560