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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-B72-CV

VI-B72-CV

VI-B72-CV DC-DC Booster Module; VI-B72-CV
VI-BWF-IV

VI-BWF-IV

VI-BWF-IV DC-DC Booster Module, 1 Output, 150W, Hybrid, PACKAGE-9; VI-BWF-IV
MG50G2CL3

MG50G2CL3

MG50G2CL3 IGBT/GTR Module In-stock / Toshiba: 600V 50A Darlington pair. Low Vce(sat), high gain. 90-day warranty, motor drives. Check stock online.
2SC2922

2SC2922

2SC2922 Power Bipolar Transistor, 17A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN; 2SC2922
MMBT5401LT3G

MMBT5401LT3G

MMBT5401LT3G High Voltage PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL; MMBT5401LT3G
S2012R

S2012R

S2012R Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN; S2012R
VBO125-18NO7

VBO125-18NO7

VBO125-18NO7 Bridge Rectifier Diode, 1 Phase, 124A, 1800V V(RRM), Silicon,; VBO125-18NO7
DNBT8105-7

DNBT8105-7

DNBT8105-7 Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3; DNBT8105-7
DZ3X068D0L

DZ3X068D0L

DZ3X068D0L Zener Diode, 6.8V V(Z), 5%, 0.2W, Silicon, Unidirectional, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN; DZ3X068D0L
APTGF90SK60T1G

APTGF90SK60T1G

APTGF90SK60T1G Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGF90SK60T1G