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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

ZDT6753TC

ZDT6753TC

ZDT6753TC Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN; ZDT6753TC
VI-25L-EY

VI-25L-EY

VI-25L-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-25L-EY
S6055M

S6055M

S6055M Silicon Controlled Rectifier, 55A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-218AC, ROHS COMPLIANT, PLASTIC PACKAGE-3; S6055M
VS-113CNQ100APBF

VS-113CNQ100APBF

VS-113CNQ100APBF Rectifier Diode, Schottky, 1 Phase, 2 Element, 100V V(RRM), Silicon, LEAD FREE, PLASTIC, D-61-8, 3 PIN; VS-113CNQ100APBF
PM10-24D15

PM10-24D15

PM10-24D15 Analog Circuit,; PM10-24D15
VI-JWR-EW

VI-JWR-EW

VI-JWR-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-JWR-EW
KD224575

KD224575

KD224575 Power Bipolar Transistor, 75A I(C), 450V V(BR)CEO, 2-Element, NPN, Silicon; KD224575
VI-JT2-EW

VI-JT2-EW

VI-JT2-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-JT2-EW
IXGA30N60C3C1

IXGA30N60C3C1

IXGA30N60C3C1 Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC, TO-263, 3 PIN; IXGA30N60C3C1
F1891CAD600

F1891CAD600

F1891CAD600 Rectifier Diode, 90A, 600V V(RRM),; F1891CAD600