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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2SA2092TLQ

2SA2092TLQ

2SA2092TLQ Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TSMT3, 3 PIN; 2SA2092TLQ
PP25-12-5

PP25-12-5

PP25-12-5 Analog Circuit,; PP25-12-5
VDI50-12P1

VDI50-12P1

VDI50-12P1 Insulated Gate Bipolar Transistor, 49A I(C), 1200V V(BR)CES, N-Channel, ECOPAC-10; VDI50-12P1
TMA124S-L

TMA124S-L

TMA124S-L TRIAC, 400V V(DRM), 12A I(T)RMS, TO-220AB, TO-220F, 3 PIN; TMA124S-L
MDA72-16N1B

MDA72-16N1B

MDA72-16N1B Rectifier Diode, 1 Phase, 2 Element, 99A, 1600V V(RRM), Silicon, TO-240AA, TO-240AA, 3 PIN; MDA72-16N1B
DSC7003R0L

DSC7003R0L

DSC7003R0L Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA, HALOGEN FREE AND ROHS COMPLIANT, MINIP3-F2-B, TO-243, SC-62, 3 PIN; DSC7003R0L
FZT955TC

FZT955TC

FZT955TC Power Bipolar Transistor, 4A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin; FZT955TC
SKM100GAL121D

SKM100GAL121D

SKM100GAL121D Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel; SKM100GAL121D
B553-2

B553-2

B553-2 Silicon Controlled Rectifier, 50000mA I(T), 800V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-4; B553-2
VBO54-08NO7

VBO54-08NO7

VBO54-08NO7 Bridge Rectifier Diode, 1 Phase, 54A, 800V V(RRM), Silicon, ROHS COMPLIANT, ECOPAC-4; VBO54-08NO7